Facilities
Highlights
PlasmaLab Plasma-Enhanced Chemical Vapor Deposition System
Description:
Silicon dioxide, silicon nitride and amorphous silicon can be deposited at low temperatures (100-300 C) using this plasma enhanced chemical vapor deposition (PECVD) system. Due to its low temperature operation, this system is ideal for deposition on compound semiconductor and polymer substrates.
Features:
Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
- 300 W power supply
- 9”diameter substrate electrode
- Gases: SiH4, N2O, NH3, CH4, CF4/O2 (cleaning)
- Typical process pressure: 500 millitor
- Standard Processes: Deposition of SiO2, Si3N4, amorphous Si
- Microprocessor controlled